unisonic technologies co., ltd uf9640 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-484.a 11 amps, 200 volts p-channel power mosfet ? description the uf9640 is a p-channel power mosfet that developed by utc?s advanced technlogy. the dev ice hasan advantage of include fast switching, low on-resistance, ruggedized device design and low cost-effectiveness. this type of package is generally applied in applications in the commercial-industrial field especially suitable for the power consumption at approximately 50w. because of its low package cost and low thermal resistance, this package is widely applied in the industry field. ? features * fast switching speed * p-channel mosfet * repetitive avalanche rated * simple drive requirements * ease of paralleling ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing uf9640l -ta3 -t uf9640g -ta3 -t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
uf9640 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r 502-484 .a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit gate to source voltage v gss 20 v avalanche current (note 1) i ar -11 a continuous i d -11 a drain current pulsed (note 1) i dm -44 a single pulsed (note 2) e as 700 mj avalanche energy repetitive (note 1) e ar 13 mj peak diode recovery dv/dt (note 3) dv/dt -5.0 v/ns power dissipation p d 125 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol typ. max. unit junction-to-ambient ja 62.5 c/w junction-to-case jc 1.0 c/w
uf9640 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r 502-484 .a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d =-250a -200 v breakdown voltage temp. coefficient v (br)dss / t j i d =-1ma, referenced to 25c -0.20 v/c drain-source leakage current i dss v ds =-200v, v gs =0v -100 a forward v gs =+20v +100 na gate-source leakage current reverse i gss v gs =-20v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -2.0 -4.0 v drain-source on-state resistance r ds(on) v gs =-10v, i d =-6.6a (note 4) 0.50 ? forward transconductance g fs v ds =-50v, i d =-6.6a (note 4) 4.1 s dynamic parameters input capacitance c iss 1200 pf output capacitance c oss 370 pf reverse transfer capacitance c rss v ds =-25v,v gs =0v,f=1.0mhz 81 pf switching parameters total gate charge q g 44 nc gate-source charge q gs 7.1 nc gate-drain charge q gd v ds =-160v, v gs =-10v, i d =-11a (note4) 27 nc turn-on delay time t d(on) 14 ns turn-on rise time t r 43 ns turn-off delay time t d(off) 39 ns turn-off fall time t f v dd =-100v,i d =-11a,r g =9.1 ? , r d =8.6 ? (note 4) 38 ns internal drain inductance l d 4.5 nh internal source inductance l s between lead, 6mm (0.25in.) from package and center of die contact 7.5 nh source- drain diode ratings and characteristics maximum body-diode continuous current i s -11 a maximum body-diode pulsed current i sm -44 a drain-source diode forward voltage v sd i s =-11a, v gs =0v, t j =25c -5.0 v body diode reverse recovery time t rr 250 300 ns body diode reverse recovery charge q rr i f =-11a, t j =25c di/dt=100a/ s (note 4) 2.9 3.6 c forward turn-on time t on intrinsic turn-on time is neglegibal (turn-on is dominated by l s +l d ) notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. v dd =-50v, starting t j =25c, l=8.7mh, r g =25 ? , i as =-11a 3. i sd -11a, di/dt 150a/ s, v dd bv dss , starting t j =150c 4. pulse test : pulse width 300 s, duty cycle 2%
uf9640 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r 502-484 .a ? test circuits and waveforms
uf9640 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r 502-484 .a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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